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STSJ3NM50 Datasheet(PDF) 1 Page - STMicroelectronics |
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STSJ3NM50 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 8 page  1/8 August 2002 STSJ3NM50 N-CHANNEL 500V - 2.5 Ω - 3A PowerSO-8 Zener-Protected MDmesh™ POWER MOSFET s TYPICAL RDS(on) = 2.5 Ω s HIGH dv/dt AND AVALANCHE CAPABILITIES s IMPROVED ESD CAPABILITY s LOW INPUT CAPACITANCE AND GATE CHARGE s LOW GATE INPUT RESISTANCE s TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain pro- cess with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products. APPLICATIONS The MDmesh™ family is very suitable for increase the power density of high voltage converters allow- ing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS TYPE VDSS RDS(on) ID STSJ3NM50 500 V < 3 Ω 3 A Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 500 V VGS Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TA = 25°C (1) Drain Current (continuous) at TC = 100°C 3 0.63 1.89 A A A IDM (2) Drain Current (pulsed) 12 A PTOT PTOT Total Dissipation at TC = 25°C Total Dissipation at TA = 25°C (1) 70 3 W W Derating Factor (1) 0.02 W/°C dv/dt (3) Peak Diode Recovery voltage slope 15 V/ns Tstg Storage Temperature – 65 to 150 °C Tj Max. Operating Junction Temperature PowerSO-8 INTERNAL SCHEMATIC DIAGRAM DRAIN CONTACT ALSO ON THE BACKSIDE |
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