STSJ3NM50 datasheet(3/8 Pages) STMICROELECTRONICS

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STSJ3NM50

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. When mounted on 1inch² FR4 Board, 2oz of Cu, t

≤ 10 sec.

2. Pulse width limited by safe operating area

3. ISD<3.3A, di/dt<400A/µs, VDD<V(BR)DSS, TJ<TJMAX

4. Pulsed: Pulse duration = 400 µs, duty cycle 1.5 %

GATE-SOURCE ZENER DIODE

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

VDD = 250 V, ID = 1.5 A

RG = 4.7Ω VGS = 10 V

(see test circuit, Figure 3)

7ns

Rise Time

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 400 V, ID = 3 A,

VGS = 10 V

5.5

2.5

2.4

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(Voff)

Off-Voltage Rise Time

Fall Time

Cross-Over Time

VDD = 480 V, ID = 3 A,

RG =4.7Ω, VGS = 10 V

(see test circuit, Figure 3)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

ISDM (2)

Source-drain Current (pulsed)

VSD (4)

Forward On Voltage

ISD = 3 A, VGS = 0

1.5

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 3, di/dt = 100A/µs,

VDD = 100 V, Tj = 25°C

(see test circuit, Figure 5)

210

790

7.5

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 3, di/dt = 100A/µs,

VDD = 100 V, Tj = 150°C

(see test circuit, Figure 5)

282

1.1

7.7

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

BVGSO

Gate-Source Breakdown

Voltage

Igs=± 1mA (Open Drain)

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