STTH806 datasheet(2/5 Pages) STMICROELECTRONICS

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Symbol

Parameter

Tests Conditions

Min.

Typ.

Max.

Unit

IR *

Reverse leakage

current

VR = VRRM

Tj = 25

°C

µA

Tj = 125

°C

100

VF **

Forward voltage drop

IF = 8 A

Tj = 25

°C

3.6

Tj = 125

°C

2.1

2.6

Pulse test : * tp = 5 ms,

δ < 2 %

** tp = 380

µs, δ < 2%

To evaluate the maximum conduction losses use the following equation :

P = 1.8 x IF(AV) + 0.1 IF

(RMS)

STATIC ELECTRICAL CHARACTERISTICS (for both diodes)

Symbol

Parameter

Test conditions

Value

Unit

Rth (j-c)

Junction to case thermal resistance

Per diode

°C/W

Rth (c)

Coupling

0.2

Rth (j-c)

Junction to case thermal resistance

Total

2.6

Conduction power dissipation for

both diodes

IF(AV) = 8 A

δ = 0.5

Tc = 80°C

THERMAL AND POWER DATA

Symbol

Tests Conditions

Min.

Typ.

Max.

Unit

trr

IF = 0.5 A

Irr = 0.25 A

IR = 1 A

Tj = 25

°C

IF = 1 A

dIF/dt = - 50 A/

µs

VR = 30 V

IRM

VR = 400 V IF = 8 A dIF/dt = -200 A/

µs

Tj = 125°C

45.5

Sfactor

0.4

RECOVERY CHARACTERISTICS

Symbol

Tests Conditions

Min.

Typ.

Max.

Unit

tfr

IF = 8 A dIF/dt = 100 A/

µs,

measured at 1.1 x VF max

Tj = 25°C

200

VFP

IF = 8 A dIF/dt = 100 A/

µs

Tj = 25

°C

TURN-ON SWITCHING CHARACTERISTICS

STTH806TTI

2/5

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