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STTH806 Datasheet(PDF) 4 Page - STMicroelectronics |
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STTH806 Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 5 page ![]() 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 Tj(°C) IRM S factor Fig. 8: Relative variation of dynamic parameters versus junction temperature (reference: Tj = 125°C). 0 50 100 150 200 250 300 350 400 450 500 0 2 4 6 8 10 12 14 16 18 20 VFP(V) IF=IF(av) Tj=125°C dIF/dt(A/µs) Fig. 9: Transient peak forward voltage versus dIF/dt (90% confidence). 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 tfr(ns) VFR=1.1*VF max. IF=IF(av) Tj=125°C dIF/dt(A/µs) Fig. 10: Forward recovery time versus dIF/dt (90% confidence). 0 50 100 150 200 250 300 350 400 450 500 0.0 0.1 0.2 0.3 0.4 0.5 0.6 S factor IF<2xIF(av) VR=400V Tj=125°C dIF/dt(A/µs) Fig. 7: Softness factor versus dIF/dt (typical values). STTH806TTI 4/5 |
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