STU13NB60 datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

THERMAL DATA

Rthj-ca se

Rthj -am b

Rthc-si nk

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-sink

Typ

Maximum Lead Temperature For Soldering Purpose

0.78

62.5

0.5

300

oC/W

AVALANCHE CHARACTERISTICS

Symb ol

Parameter

Max Valu e

Uni t

IAR

Avalanche Current, Repetitive or Not -Repet itive

(pulse width limited by Tj max,

δ <1%)

12.6

EAS

Single Pulse Avalanche Energy

(starting Tj =25

oC, ID =IAR,VDD =50 V)

800

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

V(BR)DSS

Drain-source

Breakdown Volt age

ID =250

µAVGS =0

@100

600

IDSS

Zero G ate Voltage

Drain Current (VGS =0)

VDS =Max Rating

Tc =125

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS =

± 30 V

± 100

ON (

∗)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

VGS(th)

Gate Threshold

Voltage

VDS =VGS

ID =250

µA

45V

RDS( on)

St atic Drain-source On

Resistance

VGS =10V

ID =6.3 A

0.4

0.45

Ω

ID(o n)

On St ate Drain Current

VDS >ID(on) xRDS(on) max

VGS =10 V

12. 6

DYNAMIC

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

gfs (

∗)Forward

Transconduct ance

VDS >ID(on) xRDS(on)max

ID =6.3 A

Ciss

Coss

Crss

Input Capacitance

Output Capacit ance

Reverse T ransfer

Capacitance

VDS =25 V

f = 1 MHz

VGS = 0

2950

370

3840

480

STU13NB60

2/6

STU13NB60 Datasheet(PDF) 2 Page - STMicroelectronics

STU13NB60 Datasheet(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL