Rev.1.00, Aug.20.2004, page 1 of 6

FX20VSJ-3

High-Speed Switching Use

Pch Power MOS FET

REJ03G0273-0100

Rev.1.00

Aug.20.2004

Features

• Drive voltage : 4 V

• V

• r

Ω

• I

• Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 100 ns

Outline

TO-220S

1

1. Gate

2. Drain

3. Source

4. Drain

2, 4

3

1

2

3

4

Applications

Motor control, lamp control, solenoid control, DC-DC converters, etc.

Maximum Ratings

(Tc = 25°C)

Parameter

Symbol

Ratings

Unit

Conditions

Drain-source voltage

–150

V

Gate-source voltage

±20

V

Drain current

–20

A

Drain current (Pulsed)

–80

A

Avalanche current (Pulsed)

–20

A

L = 30

µH

Source current

–20

A

Source current (Pulsed)

–80

A

Maximum power dissipation

70

W

Channel temperature

Tch

– 55 to +150

°C

Storage temperature

Tstg

– 55 to +150

°C

Mass

—

1.2

g

Typical value