BB302M datasheet(2/10 Pages) RENESAS

2 / 10 page

BB302M

Rev.4.00 Aug 10, 2005 page 2 of 9

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDS

Gate1 to source voltage

VG1S

+10

–0

Gate2 to source voltage

VG2S

±10

Drain current

Channel power dissipation

Pch

150

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown voltage

V(BR)DSS

—

ID = 200

µA, VG1S = VG2S = 0

Gate1 to source breakdown voltage

V(BR)G1SS

+10

—

IG1 = +10

µA, VG2S = VDS = 0

Gate2 to source breakdown voltage

V(BR)G2SS

±10

—

IG2 = ±10

µA, VG1S = VDS = 0

Gate1 to source cutoff current

IG1SS

—

+100

VG1S = +9 V, VG2S = VDS = 0

Gate2 to source cutoff current

IG2SS

—

±100

VG2S = ±9 V, VG1S = VDS = 0

Gate1 to source cutoff voltage

VG1S(off)

0.4

—

1.0

VDS = 9 V, VG2S = 6 V

ID = 100

µA

Gate2 to source cutoff voltage

VG2S(off)

0.4

—

1.0

VDS = 9 V, VG1S = 9 V

ID = 100

µA

Drain current

ID(op)

VDS = 9 V, VG1 = 9 V

VG2S = 6 V, RG = 120 k

Ω

Forward transfer admittance

|yfs|

—

VDS = 9 V, VG1 = 9 V, VG2S = 6 V

RG = 120 k

Ω, f = 1 kHz

Input capacitance

Ciss

2.2

3.0

4.0

VDS = 9 V, VG1 = 9 V

Output capacitance

Coss

0.8

1.1

1.5

VG2S = 6 V, RG = 120 k

Ω

Reverse transfer capacitance

Crss

—

0.017

0.04

f = 1 MHz

Power gain

—

VDS = 9 V, VG1 = 9 V, VG2S = 6 V

Noise figure

—

1.7

2.2

RG = 120 k

Ω, f = 200 MHz

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