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BB502C Datasheet(PDF) 6 Page - Renesas Technology Corp

Part # BB502C
Description  Built in Biasing Circuit MOS FET IC UHF RF Amplifier
PDF  11 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

BB502C Datasheet(HTML) 6 Page - Renesas Technology Corp

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BB502C
Rev.6.00 Apr 27, 2006 page 6 of 10
0
12
3
4
5
30
24
18
12
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VDS = 5 V
RG = 180 kΩ
f = 1 kHz
0
12
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5
30
24
18
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VDS = 5 V
RG = 270 kΩ
f = 1 kHz
Gate1 Voltage VG1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
Gate1 Voltage VG1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
VG2S = 1 V
4 V
3 V
2 V
VG2S = 1 V
4 V
3 V
0
510
15
20
4
3
2
1
0
100
200
500
1000
0
5
10
15
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VDS = VG1 = 5 V
VG2S = 4 V
RG = variable
f = 900 MHz
4
3
2
1
0
VDS = VG1 = 5 V
VG2S = 4 V
RG = variable
f = 900 MHz
Drain Current ID (mA)
Gate Resistance RG (kΩ)
Noise Figure vs. Gate Resistance
Gate Resistance RG (kΩ)
Power Gain vs. Gate Resistance
Drain Current ID (mA)
Power Gain vs. Drain Current
Noise Figure vs. Drain Current
VDS = VG1 = 5 V
VG2S = 4 V
f = 900 MHz
VDS = VG1 = 5 V
VG2S = 4 V
f = 900 MHz



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