BB502C datasheet(2/11 Pages) RENESAS

2 / 11 page

BB502C

Rev.6.00 Apr 27, 2006 page 2 of 10

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDS

Gate1 to source voltage

VG1S

−0

Gate2 to source voltage

VG2S

−0

Drain current

Channel power dissipation

Pch

100

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown voltage

V(BR)DSS

—

ID = 200

µA, VG1S = VG2S = 0

Gate1 to source breakdown voltage

V(BR)G1SS

—

IG1 = +10

µA, VG2S = VDS = 0

Gate2 to source breakdown voltage

V(BR)G2SS

—

IG2 = +10

µA, VG1S = VDS = 0

Gate1 to source cutoff current

IG1SS

—

+100

VG1S = +5 V, VG2S = VDS = 0

Gate2 to source cutoff current

IG2SS

—

+100

VG2S = +5 V, VG1S = VDS = 0

Gate1 to source cutoff voltage

VG1S(off)

0.5

0.7

1.0

VDS = 5 V, VG2S = 4 V

ID = 100

µA

Gate2 to source cutoff voltage

VG2S(off)

0.5

0.7

1.0

VDS = 5 V, VG1S = 5 V

ID = 100

µA

Drain current

ID(op)

VDS = 5 V, VG1 = 5 V

VG2S = 4 V, RG = 180 k

Ω

Forward transfer admittance

|yfs|

VDS = 5 V, VG1 = 5 V, VG2S =4 V

RG = 180 k

Ω, f = 1 kHz

Input capacitance

Ciss

1.4

1.7

2.0

Output capacitance

Coss

0.7

1.1

1.5

Reverse transfer capacitance

Crss

—

0.02

0.05

VDS = 5 V, VG1 = 5 V

VG2S =4 V, RG = 180 k

Ω

f = 1 MHz

Power gain

—

Noise figure

—

1.6

2.2

VDS = 5 V, VG1 = 5 V

VG2S =4 V, RG = 180 k

Ω

f = 900 MHz

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