STW16NB60 datasheet(3/8 Pages) STMICROELECTRONICS

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STW16NB60

Safe Operating Area

Thermal Impedance

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

Rise Time

VDD = 300V, ID =8 A

RG = 4.7Ω,VGS = 10V

(see test circuit, Figure 3)

Total Gate Charge

VDD = 480V, ID =16 A,

VGS =10V,RG =4.7Ω

105

Qgs

Gate-Source Charge

19.5

Qgd

Gate-Drain Charge

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(Voff)

Off-voltage Rise Time

VDD =480V, ID =16 A,

RG = 4.7Ω, VGS =10V

(see test circuit, Figure 5)

Fall Time

Cross-over Time

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

ISDM (2)

Source-drain Current (pulsed)

VSD (1)

Forward On Voltage

ISD =16 A,VGS =0

1.6

trr

Reverse Recovery Time

ISD = 16 A, di/dt = 100 A/µs,

VDD = 100V, Tj = 150°C

(see test circuit, Figure 5)

800

Qrr

Reverse Recovery Charge

µC

IRRM

Reverse Recovery Current

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