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STW40NS15 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STW40NS15
Description  N-CHANNEL 150V - 0.042ohm - 40A TO-247 MESH OVERLAY™ MOSFET
PDF  6 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW40NS15 Datasheet(HTML) 3 Page - STMicroelectronics

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STW40NS15
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
Rise Time
VDD = 75V, ID = 20A
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 3)
25
ns
tr
45
ns
Qg
Total Gate Charge
VDD = 120V, ID = 40A,
VGS = 10V
100
110
nC
Qgs
Gate-Source Charge
17
nC
Qgd
Gate-Drain Charge
47
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
Turn-off Delay Time
VDD = 75V, ID = 20A
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 3)
85
Tf
Fall Time
tr(Voff)
Off-voltage Rise Time
Vclamp = 120V, ID = 20 A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 5)
47
ns
tf
Fall Time
35
ns
tc
Cross-over Time
70
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
40
A
ISDM (2)
Source-drain Current (pulsed)
160
A
VSD (1)
Forward On Voltage
ISD = 40A, VGS = 0
1.5
V
trr
Reverse Recovery Time
ISD = 40A, di/dt = 100A/µs,
VDD = 50V, Tj = 150°C
(see test circuit, Figure 5)
270
ns
Qrr
Reverse Recovery Charge
200
nC
IRRM
Reverse Recovery Current
1.5
A



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