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STW50N10 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STW50N10
Description  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW50N10 Datasheet(HTML) 1 Page - STMicroelectronics

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STW50N10
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
s
TYPICAL RDS(on) = 0.027
Ω
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
oC
s
HIGH CURRENT CAPABILITY
s
175
oC OPERATING TEMPERATURE
s
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
POWER MOTOR CONTROL
s
DC-DC & DC-AC CONVERTERS
s
SYNCRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
January 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
VDS
Drain-source Voltage (VGS = 0)
100
V
VDGR
Drain- gate Voltage (RGS =20 k
Ω)
100
V
VGS
Gate-source Voltage
± 20
V
ID
Drain Current (cont inuous) at Tc =25
oC50
A
ID
Drain Current (cont inuous) at Tc =100
oC35
A
IDM(
•)
Drain Current (pulsed)
200
A
Ptot
Tot al Dissipation at Tc =25
oC
180
W
Derating Fact or
1.2
W/
oC
Tstg
St orage Temperature
-65 to 175
oC
Tj
Max. Operat ing Junction Temperat ure
175
oC
(
•) Pulse width limited by safe operating area
ISD
≤ 60 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX
TYPE
VDSS
RDS(on)
ID
ST W50N10
100 V
< 0.035
Ω
50 A
TO-247
1
2
3
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