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STW50N10 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STW50N10
Description  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW50N10 Datasheet(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
td(on)
tr
Turn-on Time
Rise Time
VDD =50 V
ID =25 A
RG =4.7
Ω
VGS =10 V
25
75
35
105
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =80 V
ID =50 A
VGS = 10 V
120
20
50
170
nC
nC
nC
SWITCHING OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
tr(Voff)
tf
tc
Of f-voltage Rise Time
Fall Time
Cross-over Time
VDD =80 V
ID =50 A
RG =4.7
Ω VGS =10 V
30
35
65
45
50
95
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
50
200
A
A
VSD (
∗)
Forward On Voltage
ISD =50 A
VGS =0
1.5
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 50 A
di/ dt = 100 A/
µs
VDD =30 V
Tj =150
oC
200
1.4
14
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
(1)ISD
≤ 60 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX
Safe Operating Area
Thermal Impedance
STW50N10
3/8



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