STW6NC90Z datasheet(1/8 Pages) STMICROELECTRONICS

Part #	STW6NC90Z

Description	N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESH™ III MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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October 2000

STW6NC90Z

N-CHANNEL 900V - 2.1

Ω - 5.2A TO-247

Zener-Protected PowerMESH™III MOSFET

s

TYPICAL RDS(on) = 2.1Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

GATE-TO-SOURCE ZENER DIODES

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY™ Power

MOSFETs for very high voltage exhibits unsur-

passed on-resistance per unit area while integrating

back-to-back Zener diodes between gate and

source. Such arrangement gives extra ESD capabil-

ity with higher ruggedness performance as request-

ed by a large variety of single-switch applications.

APPLICATIONS

s

SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

s

WELDING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

(1)ISD ≤5.2A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

TYPE

VDSS

RDS(on)

ID

STW6NC90Z

900 V

< 2.5

Ω

5.2A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

900

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

900

V

VGS

Gate- source Voltage

±25

V

ID

Drain Current (continuos) at TC = 25°C

5.2

A

ID

Drain Current (continuos) at TC = 100°C

3.3

A

IDM (1)

Drain Current (pulsed)

21

A

PTOT

Total Dissipation at TC = 25°C

160

W

Derating Factor

1.52

W/°C

IGS

Gate-source Current (*)

±50

mA

VESD(G-S)

Gate source ESD(HBM-C=100pF, R=15K

Ω)

4KV

dv/dt

Peak Diode Recovery voltage slope

3

V/ns

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

(*) Limited by maximum temperature allowed

TO-247

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