HD6432142 datasheet(770/1177 Pages) RENESAS

770 / 1177 page

Section 23 ROM (H8S/2148 F-ZTAT A-Mask Version, H8S/2147 F-ZTAT A-Mask Version, H8S/2144 F-ZTAT A-Mask Version)

Rev. 4.00 Sep 27, 2006 page 726 of 1130

REJ09B0327-0400

Notes on Use of Auto-Erase-Program Mode

• Auto-erase mode supports only entire memory erasing.

• Do not perform a command write during auto-erasing.

• Confirm normal end of auto-erasing by checking FO6. Alternatively, status read mode can also

be used for this purpose (FO7 status polling uses the auto-erase operation end identification

pin).

• The status polling FO6 and FO7 pin information is retained until the next command write.

Until the next command write is performed, reading is possible by enabling

CE and OE.

23.10.7

Status Read Mode

• Status read mode is used to identify what type of abnormal end has occurred. Use this mode

when an abnormal end occurs in auto-program mode or auto-erase mode.

• The return code is retained until a command write for other than status read mode is

performed.

Table 23.18 AC Characteristics in Status Read Mode

Conditions: V

CC = 3.3 V ±0.3 V, VSS = 0 V, Ta = 25°C ±5°C

Item

Symbol

Min

Max

Unit

Command write cycle

nxtc

—

µs

CE hold time

ceh

—

CE setup time

ces

—

Data hold time

—

Data setup time

—

Write pulse width

wep

—

OE output delay time

—

150

Disable delay time

—

100

CE output delay time

—

150

WE rise time

—

WE fall time

—

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