HD6432142 datasheet(774/1177 Pages) RENESAS

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Section 23 ROM (H8S/2148 F-ZTAT A-Mask Version, H8S/2147 F-ZTAT A-Mask Version, H8S/2144 F-ZTAT A-Mask Version)

Rev. 4.00 Sep 27, 2006 page 730 of 1130

REJ09B0327-0400

Do not set or clear the SWE bit during program execution in flash memory.

Wait for at least 100 µs after clearing the SWE bit before executing a program or reading data in

flash memory. When the SWE bit is set, data in flash memory can be rewritten, but when SWE =

1 the flash memory can only be read in program-verify or erase-verify mode. Flash memory

should only be accessed for verify operations (verification during programming/erasing). Do not

clear the SWE bit during a program, erase, or verify operation.

Do not use interrupts while flash memory is being programmed or erased.

All interrupt requests, including NMI, should be disabled when programming and erasing flash

memory to give priority to program/erase operations.

Do not perform additional programming. Erase the memory before reprogramming.

In on-board programming, perform only one programming operation on a 128-byte programming

unit block. In programmer mode, too, perform only one programming operation on a 128-byte

programming unit block. Programming should be carried out with the entire programming unit

block erased.

Before programming, check that the chip is correctly mounted in the PROM programmer.

Overcurrent damage to the device can result if the index marks on the PROM programmer socket,

socket adapter, and chip are not correctly aligned.

Do not touch the socket adapter or chip during programming.

Touching either of these can cause contact faults and write errors.

23.12

Note on Switching from F-ZTAT Version to Mask ROM Version

The mask ROM version does not have the internal registers for flash memory control that are

provided in the F-ZTAT version. Table 23.22 lists the registers that are present in the F-ZTAT

version but not in the mask ROM version. If a register listed in table 23.22 is read in the mask

ROM version, an undefined value will be returned. Therefore, if application software developed

on the F-ZTAT version is switched to a mask ROM version product, it must be modified to ensure

that the registers in table 23.22 have no effect

Table 23.22 Registers Present in F-ZTAT Version but Absent in Mask ROM Version

Abbreviation

Address

Flash memory control register 1

FLMCR1

H'FF80

Flash memory control register 2

FLMCR2

H'FF81

Erase block register 1

EBR1

H'FF82

Erase block register 2

EBR2

H'FF83

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