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ISO1176DWR Datasheet(PDF) 20 Page - Texas Instruments |
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ISO1176DWR Datasheet(HTML) 20 Page - Texas Instruments |
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20 / 25 page ![]() APPLICATION INFORMATION Transient Voltages IN ISO ISO N 2 GND Z Z Z v v + = (1) VN RIN CIN RISO CISO SystemGround (GND1) BusReturn (GND2) 16V A orB 4 9 9 IN ISO ISO N 2 GND 10 x 6 10 10 R R R v v + = + = (2) 94 . 0 16 1 1 1 C C 1 1 C 1 C 1 C 1 v v IN ISO IN ISO ISO N 2 GND = + = + = + = ISO1176 SLLS897C – MARCH 2008 – REVISED OCTOBER 2008.................................................................................................................................................. www.ti.com Isolating of a circuit insulates it from other circuits and earth, so that noise voltage develops across the insulation rather than circuit components. The most common noise threat to data-line circuits is voltage surges or electrical fast transients that occur after installation. The transient ratings of the ISO1176 standard are sufficient for all but the most severe installations. However, some equipment manufacturers use ESD generators to test equipment transient susceptibility. This practice can easily exceed insulation ratings. ESD generators simulate static discharges that may occur during device or equipment handling with low-energy but very high-voltage transients. Figure 29 models the ISO1176 bus IO connected to a noise generator. CIN and RIN is the device, and any other stray or added capacitance or resistance across the A or B pin to GND2. CISO and RISO is the capacitance and resistance between GND1 and GND2 of the ISO1176, plus those of any other insulation (transformer, etc.). Stray inductance is assumed to be negligible. From this model, the voltage at the isolated bus return is and will always be less than 16 V from VN. If the ISO1176 is tested as a stand-alone device, • R IN= 6 x 10 4 Ω, • C IN= 16 x 10 –12 F, • R ISO= 10 9 Ω and • C ISO= 10 –12 F. Notice from Figure 29 that the resistor ratio determines the voltage ratio at low frequencies, and that the inverse capacitance ratio determines the voltage ration at high frequencies. In the stand-alone case and for low frequencies, Figure 29. Device Model For Static Discharge Testing , or essentially all of the noise appears across the barrier. At very high frequencies, (3) , and 94% of VN appears across the barrier. As long as RISO is greater than RIN and CISO is less than CIN, most of the transient noise appears across the isolation barrier, as it should. We do not recommend using ESD generators to test equipment transient susceptibility, or considering product claims of ESD ratings above the barrier transient ratings of an isolated interface. ESD is best managed through recessing or covering connector pins in a conductive connector shell, and by proper installer training. 20 Submit Documentation Feedback Copyright © 2008, Texas Instruments Incorporated Product Folder Link(s) :ISO1176 |
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