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ISO1176DWR Datasheet(PDF) 20 Page - Texas Instruments

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Part # ISO1176DWR
Description  ISOLATED RS-485 PROFIBUS TRANSCEIVER
PDF  25 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

ISO1176DWR Datasheet(HTML) 20 Page - Texas Instruments

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APPLICATION INFORMATION
Transient Voltages
IN
ISO
ISO
N
2
GND
Z
Z
Z
v
v
+
=
(1)
VN
RIN
CIN
RISO
CISO
SystemGround (GND1)
BusReturn (GND2)
16V
A orB
4
9
9
IN
ISO
ISO
N
2
GND
10
x
6
10
10
R
R
R
v
v
+
=
+
=
(2)
94
.
0
16
1
1
1
C
C
1
1
C
1
C
1
C
1
v
v
IN
ISO
IN
ISO
ISO
N
2
GND
=
+
=
+
=
+
=
ISO1176
SLLS897C – MARCH 2008 – REVISED OCTOBER 2008.................................................................................................................................................. www.ti.com
Isolating of a circuit insulates it from other circuits and earth, so that noise voltage develops across the insulation
rather than circuit components. The most common noise threat to data-line circuits is voltage surges or electrical
fast transients that occur after installation. The transient ratings of the ISO1176 standard are sufficient for all but
the most severe installations. However, some equipment manufacturers use ESD generators to test equipment
transient susceptibility. This practice can easily exceed insulation ratings. ESD generators simulate static
discharges that may occur during device or equipment handling with low-energy but very high-voltage transients.
Figure 29 models the ISO1176 bus IO connected to a noise generator. CIN and RIN is the device, and any other
stray or added capacitance or resistance across the A or B pin to GND2. CISO and RISO is the capacitance and
resistance between GND1 and GND2 of the ISO1176, plus those of any other insulation (transformer, etc.). Stray
inductance is assumed to be negligible.
From this model, the voltage at the isolated bus return
is
and will always be less than 16 V from VN. If the
ISO1176 is tested as a stand-alone device,
• R
IN= 6 x 10
4 Ω,
• C
IN= 16 x 10
–12 F,
• R
ISO= 10
9 Ω and
• C
ISO= 10
–12 F.
Notice from Figure 29 that the resistor ratio determines
the voltage ratio at low frequencies, and that the
inverse capacitance ratio determines the voltage ration
at high frequencies. In the stand-alone case and for
low frequencies,
Figure 29. Device Model For Static Discharge
Testing
, or essentially all of the noise appears across the
barrier.
At very high frequencies,
(3)
, and 94% of VN appears across the barrier. As long as
RISO is greater than RIN and CISO is less than CIN, most
of the transient noise appears across the isolation
barrier, as it should.
We do not recommend using ESD generators to test equipment transient susceptibility, or considering product
claims of ESD ratings above the barrier transient ratings of an isolated interface. ESD is best managed through
recessing or covering connector pins in a conductive connector shell, and by proper installer training.
20
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Copyright © 2008, Texas Instruments Incorporated
Product Folder Link(s) :ISO1176



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