ES3F & ES3G

Vishay General Semiconductor

Document Number: 88590

Revision: 20-Nov-07

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3

Figure 3. Typical Instantaneous Forward Characteristics

Figure 4. Typical Reverse Leakage Characteristics

Figure 5. Reverse Switching Characteristics

T

T

T

T

100

10

1

0.1

0.01

0.1

0.3

0.5

0.7

0.9

1.1

1.3

1.5

Instantaneous Forward Voltage (V)

T

T

T

T

Percent of Rated Peak Reverse Voltage (%)

020

40

60

80

100

10 000

1000

100

10

1

0.1

25

50

75

100

125

150

175

80

40

120

160

200

0

t

rr

Q

rr

at 5 A, 50 A/µs

at 2 A, 20 A/µs

at 5 A, 50 A/µs

at 2 A, 20 A/µs

at 1 A, 100 A/µs

at 1 A, 100 A/µs

Junction Temperature (°C)

Figure 6. Typical Junction Capacitance

Figure 7. Forward Power Loss Characteristics

0.1

1

10

100

Reverse Voltage (V)

100

10

1

T

f = 1.0 MHz

V

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0

Average Forward Current (A)

D = 0.1

D = 0.2

D = 0.3

D = 0.8

D = 1.0

D = 0.5

D = t

t

p

T