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ESH3B Datasheet(PDF) 3 Page - Vishay Siliconix |
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ESH3B Datasheet(HTML) 3 Page - Vishay Siliconix |
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3 / 4 page ![]() New Product ESH3B, ESH3C & ESH3D Vishay General Semiconductor Document Number: 84648 Revision: 27-Aug-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Figure 3. Typical Instantaneous Forward Characteristics Figure 4. Typical Reverse Leakage Characteristics 0.2 0.4 0.6 0.8 1.0 1.2 100 10 1 0.1 0.01 Instantaneous Forward Voltage (V) T J = 150 °C T J = 125 °C T J = 175 °C T J = 25 °C 020 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) 1000 100 10 1 0.1 0.01 T J = 150 °C T J = 125 °C T J = 175 °C T J = 25 °C Figure 5. Typical Junction Capacitance Figure 6. Typical Transient Thermal Impedance Reverse Voltage (V) 0.1 1 10 100 1000 100 10 1 100 10 1 0.01 0.1 1 10 100 t - Pulse Duration (s) 0.260 (6.60) 0.280 (7.11) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.008 (0.2) 0.305 (7.75) 0.320 (8.13) 0.220 (5.59) 0.246 (6.22) 0.079 (2.06) 0.103 (2.62) 0.114 (2.90) 0.126 (3.20) Cathode Band DO-214AB (SMC) 0.185 (4.69) MAX. 0.320 REF. 0.126 (3.20) MIN. 0.060 (1.52) MIN. Mounting Pad Layout 0 (0) |
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