Document Number: 91062

www.vishay.com

S-81352-Rev. A, 16-Jun-08

3

IRF830AS, IRF830AL, SiHF830AS, SiHF830AL

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

0.01

0.1

1

10

100

0.1

1

10

100

20µs PULSE WIDTH

T = 25 C

J

°

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V

, Drain-to-Source Voltage (V)

DS

4.5V

0.1

1

10

100

1

10

100

20µs PULSE WIDTH

T = 150 C

J

°

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V

, Drain-to-Source Voltage (V)

DS

4.5V

0.1

1

10

100

4.0

5.0

6.0

7.0

8.0

V

= 50V

20µs PULSE WIDTH

DS

V

, Gate-to-Source Voltage (V)

GS

T = 25 C

J

°

T = 150 C

J

°

-60 -40 -20

0

20

40

60

80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

J

°

V

=

I =

GS

D

10V

5.0A