PCP1202

No. A1165-1/4

Applications

•

DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.

Features

•

Adoption of FBET, MBIT process.

•

High current capacitance.

•

Low collector-to-emitter saturation voltage.

•

High-speed switching.

•

High allowable power dissipation.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

180

V

Collector-to-Emitter Voltage

VCES

180

V

Collector-to-Emitter Voltage

VCEO

150

V

Emitter-to-Base Voltage

VEBO

7V

Collector Current

IC

2A

Collector Current (Pulse)

ICP

3A

Base Current

IB

400

mA

Collector Dissipation

PC

✕0.8mm)

1.3

W

Tc=25°C

3.5

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Marking : QI

Ordering number : ENA1165

73008EA TI IM TC-00001470

SANYO Semiconductors

DATA SHEET

PCP1202

NPN Epitaxial Planar Silicon Transistor

High-Voltage Switching Applications

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the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer

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