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30ETH06 Datasheet(PDF) 1 Page - Vishay Siliconix |
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30ETH06 Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 7 page ![]() Document Number: 93018 For technical questions, contact: diodes-tech@vishay.com www.vishay.com Revision: 23-Jun-08 1 Hyperfast Rectifier, 30 A FRED PtTM 30ETH06 Vishay High Power Products FEATURES • Hyperfast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature • Dual diode center tap • Designed and qualified for industrial level DESCRIPTION/APPLICATIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC-DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. PRODUCT SUMMARY trr (typical) 28 ns IF(AV) 30 A VR 600 V Base common cathode 2 13 Cathode Anode TO-220AC ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage VRRM 600 V Average rectified forward current IF(AV) TC = 103 °C 30 A Non-repetitive peak surge current IFSM TJ = 25 °C 200 Operating junction and storage temperatures TJ, TStg - 65 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage VBR, VR IR = 100 µA 600 - - V Forward voltage VF IF = 30 A - 2.0 2.6 IF = 30 A, TJ = 150 °C - 1.34 1.75 Reverse leakage current IR VR = VR rated - 0.3 50 µA TJ = 150 °C, VR = VR rated - 60 500 Junction capacitance CT VR = 600 V - 33 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH |
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