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Document Number: 83627

2

Rev. 1.6, 09-Jan-08

IL410/IL4108

Crossing,

High dV/dt, Low Input Current

Note

For additional information on the available options refer to option information.

Notes

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum

ratings for extended periods of the time can adversely affect reliability.

hole devices (DIP).

IL4108-X006

IL4108-X007

IL4108-X009

ORDER INFORMATION

PART

REMARKS

PARAMETER

TEST CONDITION

PART

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

6.0

V

Forward current

60

mA

Surge current

2.5

A

Power dissipation

100

mW

Derate from 25 °C

1.33

mW/°C

OUTPUT

Peak off-state voltage

IL410

600

V

IL4108

800

V

RMS on-state current

300

mA

Single cycle surge current

3.0

A

Total power dissipation

500

mW

Derate from 25 °C

6.6

mW/°C

COUPLER

Isolation test voltage (between emitter

and detector, climate per DIN 500414,

part 2, Nov. 74)

t = 1.0 min

5300

Pollution degree (DIN VDE 0109)

2

Creepage distance

≥ 7.0

mm

Clearance distance

≥ 7.0

mm

Comparative tracking index per

DIN IEC 112/VDE 0303 part 1, group IIIa

per DIN VDE 6110

CTI

≥ 175

Isolation resistance

Ω

Ω

Storage temperature range

- 55 to + 150

°C

Ambient temperature

- 55 to + 100

°C

max.

≤ 10 s dip soldering

≥ 0.5 mm from case bottom

260

°C