IL410 datasheet(3/10 Pages) VISHAY

3 / 10 page

Document Number: 83627

For technical questions, contact: optocoupler.answers@vishay.com

www.vishay.com

Rev. 1.6, 09-Jan-08

IL410/IL4108

Optocoupler, Phototriac Output, Zero

Crossing,

High dV/dt, Low Input Current

Vishay Semiconductors

Note

Tamb = 25 °C, unless otherwise specified.

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

IF = 10 mA

1.16

1.35

Reverse current

VR = 6.0 V

0.1

µA

Input capacitance

VF = 0 V, f = 1.0 MHz

CIN

Thermal resistance, junction to ambient

Rthja

750

°C/W

OUTPUT

Off-state voltage

ID(RMS) = 70 µA

IL410

VD(RMS)

424

460

IL4108

VD(RMS)

565

Repetitive peak off-state voltage

IDRM = 100 µA

IL410

VDRM

600

IL4108

VDRM

800

Off-state current

VD = VDRM, Tamb = 100 °C,

IF = 0 mA

ID(RMS)1

100

µA

VD = VDRM, IF = Rated IFT

ID(RMS)2

200

µA

On-state voltage

IT = 300 mA

VTM

1.7

3.0

On-state current

PF = 1.0, VT(RMS) = 1.7 V

ITM

300

Surge (non-repetitive), on-state current

f = 50 Hz

ITSM

3.0

Trigger current 1

VD = 5.0 V

IFT1

2.0

Trigger current 2

VOP = 220 V, f = 50 Hz,

Tj = 100 °C, tpF > 10 ms

IFT2

6.0

Trigger current temp. gradient

ΔI

FT1/ΔTj

7.0

µA/°C

ΔI

FT2/ΔTj

7.0

µA/°C

Inhibit voltage temp. gradient

ΔV

DINH/ΔTj

- 20

mV/°C

Off-state current in inhibit state

IF = IFT1, VDRM

IDINH

200

µA

Holding current

500

µA

Latching current

VT = 2.2 V

5.0

Zero cross inhibit voltage

IF = Rated IFT

VIH

Turn-on time

VRM = VDM = VD(RMS)

ton

µs

Turn-off time

PF = 1.0, IT = 300 mA

toff

µs

Critical rate of rise of off-state voltage

VD = 0.67 VDRM, Tj = 25 °C

dV/dtcr

10000

V/µs

VD = 0.67 VDRM, Tj = 80 °C

dVcrq/dt

5000

V/µs

Critical rate of rise of voltage at current

commutation

VD = 0.67 VDRM,

dI/dtcrq ≤ 15 A/ms, Tj = 25 °C

dV/dtcrq

10000

V/µs

VD = 0.67 VDRM,

dI/dtcrq ≤ 15 A/ms, Tj = 80 °C

dV/dtcrq

5000

V/µs

Critical rate of rise of on-state

dI/dtcrq

8.0

A/µs

Thermal resistance, junction to ambient

Rthja

150

°C/W

COUPLER

Critical rate of rise of coupled

input/output voltage

IT = 0 A, VRM = VDM = VD(RMS)

dVIO/dt

10000

V/µs

Common mode coupling capacitance

CCM

0.01

Capacitance (input to output)

f = 1.0 MHz, VIO = 0 V

CIO

0.8

Isolation resistance

VIO = 500 V, Tamb = 25 °C

RIO

≥ 1012

VIO = 500 V, Tamb = 100 °C

RIO

≥ 1011

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