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FSM75N75 Datasheet(PDF) 1 Page - FOSLINK SEMICONDUCTOR CO.,LTD

Part # FSM75N75
Description  N-CHANNEL 75V 0.0097廓 80A POWER MOSFET
PDF  9 Pages
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Manufacturer  FOSLINK [FOSLINK SEMICONDUCTOR CO.,LTD]
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FSM75N75 Datasheet(HTML) 1 Page - FOSLINK SEMICONDUCTOR CO.,LTD

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N-CHANNEL 75V 0.0097Ω 80A POWER MOSFET
2007-7-27
1/9
FSM75N75
INTERNAL SCHEMATIC DIAGRAM AND EXTERIOR
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Rating
Unit
VDSS
TJ = 25°C to 150°C
75
V
VGS
Continuous
± 20
V
Drain current (continuous) at TC = 25°C
80
ID
Drain current (continuous) at TC = 100°C
65
A
IDM
Drain current (pulsed with limited by TJM) at TC = 25°C
320
A
TJ = 25°C
200
W
PD
Derating Factor
1.5
W/°C
dv/dt
Peak diode recovery voltage slope
(ISD≤80A, di/dt≤300A/µs, VDD≤V(BR)DSS, TJ≤TJMAX)
15
V/ns
EAS
TJ = 25°C, ID = 40A, VDD= 38V
700
mJ
TJ
Max operating junction temperature
160
°C
Tstg
Storage temperature
-55 to 160
°C
FEATURES
Part No
VDSS
(at Tj(max))
RDS(on)
ID
FSM75N75
75V
<0.011Ω
80A
Exceptional dv/dt capability
100% avalanche tested
Low intrinsic capacitances
GENERAL DESCRIPTION
This Power MOSFET series has specifically been
designed to minimize input capacitance and gate
charge. It is therefore suitable as primary switch in
advanced high-efficiency, high-frequency isolated
DC-DC converters for Telecom and Computer
applications. It is also intended for any applications
with low gate drive requirements.
APPLICATIONS
DC motor control
Solenoid and relay drivers
DC-DC Converters
Automotive environment
ADVANTAGES
Easy to mount
Space savings
High power density


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