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TSSS2600 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # TSSS2600
Description  Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
PDF  5 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSSS2600 Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number: 81042
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
Rev. 1.6, 05-Sep-08
245
TSSS2600
Infrared Emitting Diode, RoHS Compliant,
950 nm, GaAs
Vishay Semiconductors
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
Note
Tamb = 25 °C, unless otherwise specified
0
50
100
150
200
250
94 8029
R
thJA
T
amb - Ambient Temperature (°C)
100
80
60
40
20
0
0
25
50
75
100
125
94 7916
R
thJA
T
amb - Ambient Temperature (°C)
100
80
60
40
20
0
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 100 mA, tp = 20 ms
VF
1.25
1.6
V
IF = 1.5 A, tp = 100 µs
VF
2.2
V
Temperature coefficient of VF
IF = 100 mA
TKVF
- 1.3
mV/K
Reverse current
VR = 5 V
IR
100
µA
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
30
pF
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie
12.6
3
mW/sr
IF = 1.5 A, tp = 100 µs
Ie
25
mW/sr
Radiant power
IF = 100 mA, tp = 20 ms
φ
e
20
mW
Temperature coefficient of
φ
e
IF = 100 mA
TK
φ
e
- 0.8
%/K
Angle of half intensity
horizontal
ϕ
1
± 25
deg
vertical
ϕ
2
± 60
deg
Peak wavelength
IF = 100 mA
λ
p
950
nm
Spectral bandwidth
IF = 100 mA
Δλ
50
nm
Temperature coefficient of
λ
p
IF = 100 mA
TK
λ
p
0.2
nm/K
Rise time
IF = 100 mA
tr
800
ns
IF = 1.5 A
tr
400
ns
Fall time
IF = 100 mA
tf
800
ns
IF = 1.5 A
tf
400
ns
Virtual source diameter
d
2
mm



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