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TSSS2600 Datasheet(PDF) 3 Page - Vishay Siliconix |
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TSSS2600 Datasheet(HTML) 3 Page - Vishay Siliconix |
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3 / 5 page ![]() www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81042 246 Rev. 1.6, 05-Sep-08 TSSS2600 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Fig. 3 - Pulse Forward Current vs. Forward Voltage Fig. 4 - Radiant Intensity vs. Forward Current Fig. 5 - Radiant Power vs. Forward Current Fig. 6 - Relative Radiant Intensity/Power vs. Ambient Temperature Fig. 7 - Relative Radiant Power vs. Wavelength Fig. 8 - Relative Radiant Intensity vs. Angular Displacement 94 7996 10 1 10 0 10 2 10 3 10 4 10-1 4 3 2 1 0 VF - Forward Voltage (V) IF - Forward Current (mA) 94 7967 103 101 102 104 100 0.1 1 10 100 0.1 1 10 100 110 100 1000 13718 IF - Forward Current (mA) - 10 10 50 0 100 0 0.4 0.8 1.2 1.6 140 94 7993 IF = 20 mA Tamb - Ambient Temperature (°C) 900 950 0 0.25 0.5 0.75 1.0 1.25 - Wavelength (nm) 1000 94 7994 I F = 100 mA λ 0.4 0.2 0 94 7969 0.6 0.9 0.8 0° 30° 10° 20° 40° 50° 60° 70° 80° 0.7 1.0 horizontal |
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