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Document Number: 94377

6

Revision: 30-Apr-08

ST333SP Series

(Stud Version), 330 A

Fig. 9 - Reverse Recovered Charge Characteristics

Fig. 10 - Reverse Recovery Current Characteristics

Fig. 11 - Frequency Characteristics

Fig. 12 - Frequency Characteristics

80

100

120

140

160

180

200

220

240

260

280

300

320

10

20

30

40

50

60

70

80

90 100

Rate Of Fall Of On-state Current - di/ dt (A/ µs)

I

= 500 A

300 A

200 A

100 A

50 A

ST333SSeries

T = 125 °C

J

TM

20

40

60

80

100

120

140

160

180

10

20

30

40

50

60

70

80

90 100

Rate Of Fall Of On-state Current - di/ dt (A/ µs)

I

= 500 A

300 A

200 A

100 A

50 A

ST333SSeries

T = 125 °C

J

TM

1E1

1E2

1E3

1E4

1E1

1E2

1E3

1E4

50 Hz

400

2500

100

Pulse Basewidth (µs)

1000

1500

200

500

Snubb er circ uit

R = 10 ohms

C

= 0.47 µF

V

= 80%V

s

s

D

DRM

2000

ST333SSeries

Sinusoidal pulse

T = 50°C

C

1E4

tp

3000

5000

1E1

1E2

1E3

1E4

50 Hz

400

100

Pulse Basewidth (µs)

1000

1500

200

500

Snubb er circuit

R = 10 ohms

C

= 0.47 µF

V

= 80%V

s

s

D

DRM

ST333SSeries

Sinusoida l pulse

T = 75°C

C

tp

1E1

2000

2500

3000

1E1

1E2

1E3

1E4

1E11E2

1E31E4

100

1500

200

Pulse Basewidth (µs)

2500

400

1000

50 Hz

500

Snub b er circ uit

R = 10 ohms

C

= 0.47 µF

V

= 80%V

s

s

D

DRM

ST333SSeries

Trapezoidal pulse

T = 50°C

di/ d t = 50A/ µs

C

1E4

2000

3000

1E1

1E2

1E3

1E4

50 Hz

400

100

1000

1500

200

Pulse Basewidth (µs)

500

Snub ber c ircuit

R = 10 ohms

C

= 0.47 µF

V

= 80%V

s

s

D

DRM

ST333SSeries

Tra pezoidal pulse

T = 75°C

di/ dt = 50A/µs

C

2000

2500

3000

1E1