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Document Number: 83646

2

Rev. 1.5, 20-Dec-07

ILD1/ILD2/ILD5/ILQ1/ILQ2/ILQ5

Vishay Semiconductors

Optocoupler, Phototransistor Output

(Dual, Quad Channel)

Note

For additional information on the available options refer to option information.

Notes

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum

ratings for extended periods of the time can adversely affect reliability.

hole devices (DIP).

ILD1-X009

CTR

> 20 %, SMD-8 (option 9)

ILD2-X006

CTR

> 100 %, DIP-8 400 mil (option 6)

ILD2-X007

CTR

> 100 %, SMD-8 (option 7)

ILD2-X009

CTR

> 100 %, SMD-8 (option 9)

ILD5-X009

CTR

> 50 %, SMD-8 (option 9)

ILQ1-X009

CTR

> 20 %, SMD-16 (option 9)

ILQ2-X009

CTR

> 100 %, SMD-16 (option 9)

ORDER INFORMATION

PART

REMARKS

PARAMETER

TEST CONDITION

PART

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

6.0

V

Forward current

60

mA

Surge current

2.5

A

Power dissipation

100

mW

Derate linearly from 25 °C

1.3

mW/°C

OUTPUT

Collector emitter reverse voltage

ILD1

50

V

ILQ1

50

V

ILD2

70

V

ILQ2

70

V

ILD5

70

V

ILQ5

70

V

Collector current

50

mA

t < 1.0 ms

400

mA

Power dissipation

200

mW

Derate lineary from 25 °C

2.6

mW/°C

COUPLER

Isolation test voltage

(between emitter and detector referred to

standard climate 25 °C/50 % RH, DIN 50014)

5300

Creepage distance

≥ 7.0

mm

Clearance distance

≥ 7.0

mm

Isolation resistance

Ω

Ω

Package power dissipation

250

mW

Derate linearly from 25 °C

3.3

mW/°C

Storage temperature

- 40 to + 150

°C

Operating temperature

- 40 to + 100

°C

Junction temperature

100

°C

2.0 mm from case bottom

260

°C