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TN805 Datasheet(PDF) 4 Page - STMicroelectronics |
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TN805 Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 5 page ![]() -40 -20 0 20406080 100 120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Tj(°C) Igt,IH[Tj]/Ig,IH[Tj=25°C] Igt IH Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. 1 10 100 1000 0 10 20 30 40 50 60 70 80 Number of cycles ITSM(A) Tj initial=25°C F=50Hz Fig. 6: Non repetitive surge peak on-state current versus number of cycles. 12 5 10 10 20 50 100 300 tp(ms) ITSM(A),I²t(A²s) Tj initial=25°C ITSM I²t Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and cor- responding value of I2t. 0 2 4 6 8 10 12 14 16 18 20 0 20 40 60 80 100 S(Cu) (cm²) Rth(j-a) (°C/W) Fig. 9: Thermal resistance junction to ambient ver- sus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35 µm). 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.1 1.0 10.0 100.0 VTM(V) ITM(A) Tj max.: Vto=0.85V Rt=46m Tj=Tj max. Tj=25°C Fig. 8: On-state characteristics (maximum values). TN805/TN815-B 4/5 |
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