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ATA5577 Datasheet(PDF) 6 Page - ATMEL Corporation

Part # ATA5577
Description  Read/Write LF RFID IDIC 100 to 150 kHz
PDF  8 Pages
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Manufacturer  ATMEL [ATMEL Corporation]
Direct Link  http://www.atmel.com
Logo ATMEL - ATMEL Corporation

ATA5577 Datasheet(HTML) 6 Page - ATMEL Corporation

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6
4967DS–RFID–10/08
ATA5577 [Preliminary]
6.
Electrical Characteristics
T
amb = +25°C; fcoil = 125 kHz; unless otherwise specified
No.
Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Type*
1
RF frequency range
f
RF
100
125
150
kHz
2.1
Supply current (without
current consumed by the
external LC tank circuit)
T
amb = 25°C
(1)
IDD
1.5
TBD
µA
T
2.2
Read - full temperature
range
2TBD
µA
Q
2.3
Programming - full
temperature range
25
TBD
µA
Q
3.1
Coil voltage (AC supply)
POR threshold (50-mV
hysteresis)
V
coil pp
TBD
3.6
TBD
V
Q
3.2
Read mode and write
command(2)
6V
clamp
VQ
3.3
Program EEPROM(2)
8Vclamp
VQ
4
Start-up time
Vcoil pp = 6V
tstartup
2.5
TBD
ms
Q
5.1
Clamp voltage (depends
on settings in option
register)
3-mA current into
Coil1/Coil2
Vpp clamp lo
TBD
11
TBD
V
Q
5.2
Vpp clamp med
TBD
13
TBD
V
Q
5.3
Vpp clamp hi
TBD
17
TBD
V
T
5.4
20-mA current into
Coil1/Coil2
V
pp clamp med
TBD
15
TBD
V
T
6.1
Modulation parameters
(depends on settings in
option register)
3-mA current into
Coil1/Coil2 and
modulation ON
V
pp mod lo
TBD
3
TBD
V
T
6.2
V
pp mod med
TBD
5
TBD
V
Q
6.3
V
pp mod hi
TBD
7
TBD
V
Q
6.4
20 mA current into
Coil1/Coil2 and
modulation ON
Vpp mod med
TBD
7.5
TBD
V
T
6.5
Thermal stability
Vmod lo/Tamb
–1
mV/°C
Q
7.1
Clock detection level
(depends on settings in
option register)
Vcoil pp = 8V
Vclkdet lo
TBD
250
TBD
mV
Q
7.2
Vclkdet med
TBD
550
TBD
mV
T
7.3
Vclkdet hi
TBD
800
TBD
mV
Q
7.4
Gap detection level
(depends on settings in
option register)
Vcoil pp = 8 V
Vgapdet lo
TBD
250
TBD
mV
Q
7.5
Vgapdet med
TBD
550
TBD
mV
T
7.6
Vgapdet hi
TBD
850
TBD
mV
Q
8
Programming time
From last command gap
to re-enter read mode
(64 + 648 internal
clocks)
Tprog
55.7
6
msT
9
Endurance
Erase all/Write all(3)
ncycle
100000
Cycles
Q
*) Type means: T: directly or indirectly tested during production; Q: guaranteed based on initial product qualification data
Notes:
1. I
DD measurement set-up R = 100kΩ; VCLK = Vcoil = 3V: EEPROM programmed to 00 ... 000 (erase all); chip in modulation
defeat. IDD = (VOUTmax – VCLK)/R
2. Current into Coil1/Coil2 is limited to 10 mA.
3. Since EEPROM performance is influenced by assembly processes, Atmel confirms the parameters for DOW (tested die on
uncut wafer) delivery.



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