TC4422EPA datasheet(3/6 Pages) TELCOM

3 / 6 page

4-233

TELCOM SEMICONDUCTOR, INC.

9A HIGH-SPEED MOSFET DRIVERS

TC4421

TC4422

ELECTRICAL CHARACTERISTICS (cont.):

Measured over operating temperature range with 4.5V

≤ V

S ≤ 18V unless otherwise specified.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Input

VIH

Logic 1 Input Voltage

2.4

—

VIL

Logic 0 Input Voltage

—

0.8

IIN

Input Current

≤ VIN ≤ VDD

– 10

—

µA

Output

VOH

High Output Voltage

See Figure 1

VDD – 0.025

—

VOL

Low Output Voltage

See Figure 1

—

0.025

Output Resistance, High

VDD = 18V, IO = 10 mA

—

2.4

3.6

Output Resistance, Low

VDD = 18V, IO = 10 mA

—

1.8

2.7

Switching Time (Note 1)

Rise Time

Figure 1, CL = 10,000 pF

—

120

nsec

Fall Time

Figure 1, CL = 10,000 pF

—

120

nsec

tD1

Delay Time

Figure 1

—

nsec

tD2

Delay Time

Figure 1

—

nsec

Power Supply

Power Supply Current

VIN = 3V

—

0.45

VIN = 0V

—

0.06

0.2

VDD

Operating Input Voltage

4.5

—

Figure 1. Switching Time Test Circuit

INPUT

C = 10,000 pF

OUTPUT

TC4421

0.1

µF

0.1

µF

= 18V

t R

INPUT

90%

10%

+18V

OUTPUT

t D1

+5V

t F

90%

t D2

10%

0.1

µF

10%

90%

INPUT: 100 kHz, square wave,

RISE = tFALL ≤ 10nsec

NOTE: 1. Switching times guaranteed by design.

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