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TELCOM SEMICONDUCTOR, INC.

TC4626

TC4627

POWER CMOS DRIVERS WITH VOLTAGE TRIPLER

ABSOLUTE MAXIMUM RATINGS

PDIP ................................................................. 730mW

CerDIP .............................................................. 800mW

SOIC ................................................................. 760mW

Derating Factor

PDIP ....................................... 5.6 mW/

°C Above 36°C

CerDIP ........................................................ 6.0 mW/

°C

Supply Voltage ........................................................... 6.2V

Operating Temperature : M Version ...... – 55

°C to +125°C

E Version ......... – 40

°C to +85°C

C Version .............. 0

°C to +70°C

Maximum Chip Temperature ................................. +150

°C

Storage Temperature ............................ – 65

°C to +150°C

Lead Temperature (10 sec) ................................... +300

°C

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Driver Input

Logic 1, Input Voltage

2.4

—

—

V

Logic 0, Input Voltage

—

—

0.8

V

Input Current

0V

– 1

—

1

µA

Driver Output

High Output Voltage

—

—

V

Low Output Voltage

—

—

0.025

V

Output Resistance, High

—

10

15

Ω

Output Resistance, Low

—

8

10

Ω

Peak Output Current

—

1.5

—

A

Switching Time

Rise Time

Test Figure 1,2

—

33

40

nsec

Fall Time

Test Figure 1,2

—

27

35

nsec

Delay Time

Test Figure 1,2

—

35

45

nsec

Delay Time

Test Figure 1,2

—

45

55

nsec

Maximum Switching Frequency

Test Figure 1

1.0

—

—

MHz

Voltage Booster

Voltage Tripler Output

—

300

400

Ω

Source Resistance

Voltage Doubler Output

—

120

200

Ω

Source Resistance

Oscillator Frequency

12

—

28

kHz

Oscillator Amplitude

4.5

—

10

V

Measured at C1-

UV

Undervoltage Threshold

7.0

7.8

8.5

V

Start Up Voltage

10.5

11.3

12

V

No Load

14.6

—

—

V

Power Supply

Power Supply Current

—

—

2.5

mA

Supply Voltage

4.0

—

6.0

V