TC4627EPA datasheet(3/7 Pages) TELCOM

3 / 7 page

4-273

TELCOM SEMICONDUCTOR, INC.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Driver Input

VIH

Logic 1, Input Voltage

2.4

—

VIL

Logic 0, Input Voltage

—

0.8

IIN

Input Current

≤ VIN ≤ VBOOST

– 10

—

µA

Driver Output

VOH

High Output Voltage

VDRIVE – 0.025

—

VOL

Low Output Voltage

—

0.025

Output Resistance, High

IOUT = 10 mA, VDD = 5V

C & E Version (TA = 70°C or 85°C)

—

Ω

M Version (TA = 125°C)

—

Output Resistance, Low

IOUT = 10 mA, VDD = 5V

C & E Version (TA = 70°C or 85°C)

—

Ω

M Version (TA = 125°C)

—

IPK

Peak Output Current

—

1.5

—

Switching Time

Rise Time

Test Figure 1,2

—

nsec

Fall Time

Test Figure 1,2

—

nsec

tD1

Delay Time

Test Figure 1,2

—

nsec

tD2

Delay Time

Test Figure 1,2

—

nsec

FMAX

Maximum Switching Frequency Test Figure 1

750

—

kHz

VDD = 5V, VBOOST > 8.5V

Voltage Booster

Voltage Boost Output

IL = 10 mA, VDD = 5V

—

400

500

Ω

Source Resistance

Voltage Doubler Output

—

170

300

Ω

Source Resistance

FOSC

Oscillator Frequency

—

kHz

VOSC

Oscillator Amplitude

RLOAD = 10kΩ

4.5

—

Measured at C1-

Undervoltage Threshold

7.0

7.8

8.5

@ VBOOST

VSTART

Start Up Voltage

10.5

11.3

@ VBOOST

VBOOST

@VDD = 5V

No Load

14.6

—

Power Supply

IDD

Power Supply Current

VIN = LOW or HIGH

—

VDD

Supply Voltage

4.0

—

6.0

POWER CMOS DRIVERS WITH VOLTAGE TRIPLER

TC4626

TC4627

ELECTRICAL CHARACTERISTICS: TA = Over Operating Temperature Range VDD = 5V C1 = C2 = C3 10µF

unless otherwise specified.

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