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2SA1875 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SA1875 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 2 page  SMD Type Transistors 1 2.3 0.60+0.1 -0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4.60+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 0.127 max TO-252 Unit: mm 1 Base 2 Collector 3 Emitter www.kexin.com.cn High-voltage Switching Transistor 2SA1875 Features High fT :fT=400MHz(typ). High breakdown voltage : VCEO 200V(min). Large current capacitance. Adoption of FBET process. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-to-Base Voltage VCBO -200 V Collector-to-Emitter Voltage VCEO -200 V Emitter-to-Base Voltage VEBO -3 V Collector Current IC -300 mA Collector Current (Pulse) ICP -600 mA Base Current IB -30 mA Collector Dissipation 0.8 W Tc=25 12 W Junction Temperature Tj 150 Storage Temperature Tstg -55to150 PC |
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Similar Description - 2SA1875 |
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