KPCF8402 datasheet(1/3 Pages) KEXIN

Part #	KPCF8402

Description	Silicon P, N Channel MOS Type Transistor

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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SMD Type

IC

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SMD Type

IC

Silicon P, N Channel MOS Type Transistor

KPCF8402

Features

Low drain-source ON resistance

: P Channel RDS (ON) =60m

(typ.)

N Channel RDS (ON) =38m

(typ.)

High forward transfer admittance

: P Channel |Yfs|=5.9S (typ.)

N Channel |Yfs|=6.8S (typ.)

Low leakage current

: P Channel IDSS =-10

A(VDS =-30 V)

N Channel IDSS =10

A(VDS =30V)

Enhancement-mode

: P Channel Vth = -0.8 to -2.0 V (VDS =-10 V, ID =-1mA)

N Channel Vth = 1.3 to 2.5 V (VDS =10V, ID =1mA)

Absolute Maximum Ratings Ta = 25

Symbol

P-Channel

N-Channel

Unit

VDSS

-30

30

V

VDGR

-30

30

V

VGSS

20

V

DC (Note 1)

ID

-3.2

4

A

Pulse (Note 1)

IDP

-12.8

16

A

Single-device operation

(Note 3a)

PD(1)

1.35

Single-device value at

dual operation(Note 3b)

PD(2)

1.12

Single-device operation

(Note 3a)

PD(1)

0.53

Single-device value at

dual operation(Note 3b)

PD(2)

0.33

Single pulse avalanche energy(Note 4)

EAS

0.67

2.6

mJ

IAR

-1.6

2

A

EAR

mJ

Tch

Storage temperature range

Tstg

Single-device operation

(Note 3a)

Rth (ch-a) (1)

Single-device value at

dual operation (Note 3b)

Rth (ch-a) (2)

Single-device operation

(Note 3a)

Rth (ch-a) (1)

Single-device value at

dual operation (Note 3b)

Rth (ch-a) (2)

Thermal resistance,channel

to ambient (t = 5 s) (Note

2a)

Thermal resistance,channel

to ambient (t = 5 s) (Note

2b)

/W

235.8

378.8

-55to150

W

92.6

Drain current

Drain power dissipation (t =

5s)

Drain power dissipation (t =

5 s) (Note 2b)

Avalanche current

Repetitive avalanche energy Single-device value at

dual operation (Note 2a, 3b, 5)

Channel temperature

111.6

0.11

150

Parameter

Drain-source voltage

Drain-gate voltage (RGS =20k

)

Gate-source voltage

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KPCF8402 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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