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KPCF8402 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

Part # KPCF8402
Description  Silicon P, N Channel MOS Type Transistor
PDF  3 Pages
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

KPCF8402 Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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2
SMD Type
IC
SMD Type
IC
KPCF8402
Electrical Characteristics Ta = 25
Parameter
Symbol
Min
Typ
Max
Unit
VGS =
16 V, VDS =0V
P-Ch
10
A
VGS =
16 V, VDS =0V
N-Ch
10
A
VDS =?30 V, VGS =0V
P-Ch
-10
A
VDS =30V, VGS =0V
N-Ch
10
A
V (BR) DSS
ID =-10 mA, VGS =0V
-30
V
V (BR) DSX
ID =-10 mA, VGS =20V
-15
V
V (BR) DSS
ID =10 mA, VGS =0V
30
V
V (BR) DSX
ID =10mA, VGS =-20 V
15
V
VDS =-10 V, ID = -1 mA
P-Ch
-0.8
-2.0
V
VDS =10V, ID =1mA
N-Ch
1.3
2.5
V
VGS =-4.5V, ID = -1.6A
80
105
VGS =-10 V, ID = -1.6 A
60
72
VGS =4.5 V, ID =2.0A
58
77
VGS =10V, ID =2.0 A
38
50
VDS =-10 V, ID =-1.6A
P-Ch
2.9
5.9
S
VDS =10V, ID = 2.0 A
N-Ch
3.4
6.8
S
Input capacitance
Ciss
600
Reverse transfer capacitance
Crss
60
Output capacitance
Coss
70
Input capacitance
Ciss
470
Reverse transfer capacitance
Crss
60
Output capacitance
Coss
80
Switching time Rise time
tr
5.3
Switching time Turn-on time
ton
12
Switching time Fall time
tf
8.4
Switching time Turn-off time
toff
34
Switching time Rise time
tr
5.2
Switching time Turn-on time
ton
8.3
Switching time Fall time
tf
4.0
Switching time Turn-off time
toff
22
Total gate charge (gate-source plus
gate-drain)
Qg
14
Gate-source charge 1
Qgs1
1.4
Gate-drain (Gate-source charge
"miller") charge
Qgd
2.7
m
pF
ns
nC
RDS (ON)
Drain-source ON resistance
Drain-source breakdown voltage
Testconditons
P-Ch
N-Ch
P-Ch
ns
N-Ch
P-Ch
VDD=-24V,VGS=-10V,ID=-3.2A
IGSS
Gate leakage current
IDSS
Drain cut-off current
Drain-source breakdown voltage
Vth
Gate threshold voltage
RDS (ON)
Drain-source ON resistance
|Yfs|
Forward transfer admittance
VDS =10V, VGS = 0 V,f= 1 MHz
m
pF
VDS =-10 V, VGS = 0 V,f= 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch



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