MJ10002 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

MJ10002

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 0.25A; IB= 0

350

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 5A; IB= 0.25A

IC= 5A; IB= 0.25A, T

C= 100℃

1.9

2.0

V CE(sat)-2

Collector-Emitter Saturation Voltage

IC= 10A; IB= 1A

2.9

VBE(sat)

Base-Emitter Saturation Voltage

IC= 5A; IB= 0.25A

IC= 5A; IB= 0.25A, T

C= 100℃

2.5

ICEV

Collector Cutoff Current

VCE=450V;VBE(off)=1.5V

VCE=450V;VBE(off)=1.5V;TC=150℃

0.25

5.0

ICER

Collector Cutoff Current

VCE= 450V; RBE= 50Ω; TC= 100℃

5.0

IEBO

Emitter Cutoff Current

VEB= 8V; IC= 0

175

hFE-1

DC Current Gain

IC= 2.5A, VCE= 5V

hFE-2

DC Current Gain

IC= 5A, VCE= 5V

VECF

C-E Diode Forward Voltage

IF= 5A

5.0

COB

Output Capacitance

IE= 0, VCB= 50V; ftest= 0.1MHz

275

Switching Times; Resistive Load

Delay Time

0.05

0.2

μs

Rise Time

0.25

0.6

μs

Storage Time

1.2

3.0

μs

Fall Time

VCC= 250V; IC= 5A; IB1= 0.25A

VBE(off)= 5V

tp= 50μs, Duty Cycle≤2%

0.6

1.5

μs

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