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MJ10002 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MJ10002 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ10002 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V (Min.) ·High Switching Speed APPLICATIONS Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applications as: ·Switching Regulators ·Inverters ·Solenoid and Relay Drivers ·Motor Controls ·Deflection Circuits ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO(SUS) Collector-Emitter Voltage 350 V VCEX(SUS) Collector-Emitter Voltage 400 V VCEV Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continunous 10 A ICM Collector Current-Peak 20 A IB B Base Current-Continunous 2.5 A IBM Base Current-Peak 5.0 A PC Collector Power Dissipation @TC=25℃ 150 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.17 ℃/W isc Website:www.iscsemi.cn |
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