BU306F datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BU306F/307F

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BU306F

300

V(BR)CEO

Collector-Emitter

Breakdown Voltage

BU307F

IC= 0.1A ;IB= 0; L=25mH

400

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 2A; IB= 0.4A

1.0

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 5A; IB= 1A

IC= 5A; IB= 1A; T

J= 100℃

1.5

2.0

VCE(sat)-3

Collector-Emitter Saturation Voltage

IC= 8A; IB= 2A

3.0

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= 2A; IB= 0.4A

1.2

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= 5A; IB= 1A

IC= 5A; IB= 1A; T

J= 100℃

1.6

1.5

ICES

Collector Cutoff Current

VCE= VCESmax;VBE= -1.5V

VCE= VCESmax;VBE= -1.5V;TJ= 100℃

IEBO

Emitter Cutoff Current

VEB= 9V; IC=0

hFE-1

DC Current Gain

IC= 0.5A ; VCE= 5V

hFE-2

DC Current Gain

IC= 2A ; VCE= 5V

hFE-3

DC Current Gain

IC= 5A ; VCE= 5V

COB

Output Capacitance

IE= 0 ; VCB= 10V

Current-Gain—Bandwidth Product

IC= 0.5A ; VCE= 10V, ftest= 1.0MHz

MHz

Switching Times ; Resistive Load

Delay Time

0.1

μs

Rise Time

1.0

μs

Storage Time

3.0

μs

Fall Time

IC= 5A; IB1= -IB2= 1A;

VCC= 125V; tp= 25μs

0.7

μs

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