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BU306F Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BU306F
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU306F Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BU306F Datasheet HTML 1Page - Inchange Semiconductor Company Limited BU306F Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU306F/307F
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 300V(Min)- BD306F
400V(Min)- BD307F
·Collector Current-8A
APPLICATIONS
·Designed for use in switching regulators, inverters, motor
controls, solenoid/relay drivers and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BU306F
600
VCBO
Collector-Base Voltage
BU307F
700
V
BU306F
300
VCEO
Collector-Emitter Voltage
BU307F
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
16
A
IB
B
Base Current
4
A
IBM
Base Current-Peak
8
A
PC
Collector Power Dissipation
@ TC=25℃
20
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
6.12
℃/W
isc Website：www.iscsemi.cn


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