MJ11017 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc Silicon PNP Darlington Power Transistor

J11017

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= -100mA, IB= 0

-150

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= -10A ,IB= -0.1A

-2.0

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= -15A ,IB= -0.15A

-3.4

VBE(sat)

Base-Emitter Saturation Voltage

IC= -15A ,IB= -0.15A

-3.8

VBE(on)

Base-Emitter On Voltage

IC= -10A ; VCE= -5V

-2.8

ICEV

Collector Cutoff Current

VCEV=150V;VBE(off)=1.5V

VCEV=150V;VBE(off)=1.5V;TC=150℃

-0.5

-5.0

ICEO

Collector Cutoff Current

VCE= -75V, IB=0

-1

IEBO

Emitter Cutoff Current

VEB= -5V; IC=0

-2

hFE-1

DC Current Gain

IC= -10A ; VCE= -5V

400

15000

hFE-2

DC Current Gain

IC= -15A ; VCE= -5V

100

COB

Output Capacitance

IE= 0 ; VCB= -10V,f= 0.1MHz

600

Switching times

Delay Time

Rise Time

0.5

μs

Storage Time

2.7

μs

Fall Time

IC= -10A , VCC= -100V;

IB1= -0.1A; VBE(off)= -5V;

Duty Cycle≤1.0%

2.5

μs

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