AOD4100 datasheet(1/6 Pages) AOSMD

Part #	AOD4100

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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1 / 6 page

Symbol

VDS

VGS

IDM

IAR

EAR

TJ, TSTG

Symbol

Typ

Max

16

19

43

52

RθJC

2

3

°C/W

PDSM

6.5

TA=70°C

4.2

-55 to 175

Junction and Storage Temperature Range

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient

A

t ≤ 10s

RθJA

°C/W

Maximum Junction-to-Ambient

A

Steady-State

Repetitive avalanche energy L=0.3mH

C

Maximum Junction-to-Case

D

Steady-State

Power Dissipation

A

TA=25°C

Power Dissipation

B

TC=25°C

V

PD

Avalanche Current

C

TC=100°C

Pulsed Drain Current

C

Gate-Source Voltage

120

118

V

±30

Continuous Drain

Current

B

Maximum

Units

Parameter

TC=25°C

G

TC=100°C

25

Absolute Maximum Ratings T A=25°C unless otherwise noted

Drain-Source Voltage

ID

25

°C

50

W

28

A

50

49

A

mJ

W

AOD4100

N-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = 25V

ID = 50A (VGS = 10V)

RDS(ON) < 6.5mΩ (VGS = 20V)

RDS(ON) < 9mΩ (VGS = 12V)

RDS(ON) < 12mΩ (VGS = 10V)

100% UIS Tested!

100% Rg Tested!

General Description

The AOD4100 uses advanced trench technology to

provide excellent RDS(ON), shoot-through immunity

and body diode characteristics. This device is ideally

suited for use as a High side switch in CPU core

power conversion.

-RoHS Compliant

-Halogen Free*

G

D

S

G

TO-252

D-PAK

Top View

S

Bottom View

D

G

S

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

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AOD4100 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

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