AOD4100 datasheet(2/6 Pages) AOSMD

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AOD4100

Symbol

Min

Typ

Max

Units

BVDSS

TJ=55°C

IGSS

100

VGS(th)

3.2

ID(ON)

120

5.4

6.5

TJ=125°C

7.5

7.3

9.8

gFS

VSD

0.72

Ciss

1100

1350

Coss

420

Crss

200

0.8

1.5

Ω

Qg(12V)

Qg(10V)

Qgs

6.5

Qgd

6.8

tD(on)

9.5

13.5

tD(off)

11.5

5.4

trr

Qrr

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

RDS(ON)

Static Drain-Source On-Resistance

Ω

VGS=20V, ID=20A

VGS=12V, ID=20A

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs

VGS=10V, ID=20A

Reverse Transfer Capacitance

IF=20A, dI/dt=100A/µs

Forward Transconductance

Diode Forward Voltage

Maximum Body-Diode Continuous Current

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

VGS=12V, VDS=5V

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

µA

Gate Threshold Voltage

VDS=VGS ID=250µA

VDS=20V, VGS=0V

VDS=0V, VGS= ±30V

Zero Gate Voltage Drain Current

Gate-Body leakage current

IS=1A,VGS=0V

VDS=5V, ID=20A

VGS=10V, VDS=12.5V, RL=0.68Ω,

RGEN=0.6Ω

Turn-Off Fall Time

Turn-On DelayTime

DYNAMIC PARAMETERS

Input Capacitance

Total Gate Charge

Output Capacitance

Turn-On Rise Time

Turn-Off DelayTime

Gate Drain Charge

VGS=0V, VDS=12.5V, f=1MHz

SWITCHING PARAMETERS

Gate Source Charge

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Total Gate Charge

VGS=10V, VDS=12.5V, ID=20A

A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The

Power dissipation PDSM is based on t<10s R θJA and the maximum allowed junction temperature of 150°C. The value in any given application

depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is limited by bond-wires.

H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.

*This device is guaranteed green after data code 8X11 (Sep 1

ST 2008).

Re1: Oct 2008

Alpha & Omega Semiconductor, Ltd.

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