IRF830 datasheet(1/4 Pages) A-POWER

Part #	IRF830

Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	A-POWER [Advanced Power Electronics Corp.]

Direct Link	http://www.a-power.com.tw

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1 / 4 page

Advanced Power

N-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼ Ease of Paralleling

BVDSS

500V

▼ Fast Switching Characteristic

RDS(ON)

1.5Ω

▼ Simple Drive Requirement

ID

4.5A

Description

Absolute Maximum Ratings

Symbol

Units

VDS

Drain-Source Voltage

V

VGS

Gate-Source Voltage

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V

A

IDM

Pulsed Drain Current

1

A

PD@TC=25℃

Total Power Dissipation

W

W/℃

EAS

Single Pulse Avalanche Energy

2

mJ

IAR

Avalanche Current

A

TSTG

℃

TJ

Operating Junction Temperature Range

℃

Thermal Data

Symbol

Value

Unit

Rthj-c

Thermal Resistance Junction-case

Max.

1.7

℃

/W

Rthj-a

Thermal Resistance Junction-ambient

Max.

62

℃

/W

Data & specifications subject to change without notice

Parameter

Storage Temperature Range

-55 to 150

Parameter

Linear Derating Factor

IRF830

±20

Rating

500

RoHS-compliant Product

4.5

18

74

4.5

2.8

101

0.59

-55 to 150

200420071-1/4

G

D

S

TO-220(P)

The TO-220 and package is universally preferred for all commercial-industrial

applications. The device is suited for switch mode power supplies ,DC-AC

converters and high current high speed switching circuits.

G

D

S

APEC MOSFET provide the power designer with the best combination of fast

switching , lower on-resistance and reasonable cost.

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