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LTC4558 Datasheet(PDF) 3 Page - Linear Technology |
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LTC4558 Datasheet(HTML) 3 Page - Linear Technology |
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3 / 12 page ![]() LTC4558 3 4558f Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: This specification applies to both Smart Card classes. PARAMETER CONDITIONS MIN TYP MAX UNITS CLKA,B Low Level Output Voltage (VOL) Sink Current = – 200µA (Note 2) ● 0.2 V High Level Output Voltage (VOH) Source Current = 200µA (Note 2) ● VCCA,B –0.2 V Rise/Fall Time Loaded with 50pF (10% to 90%) (Note 2) ● 16 ns CLKA,B Frequency (Note 2) ● 10 MHz RSTA,B Low Level Output Voltage (VOL) Sink Current = – 200µA (Note 2) ● 0.2 V High Level Output Voltage (VOH) Source Current = 200µA (Note 2) ● VCCA,B –0.2 V Rise/Fall Time Loaded with 50pF (10% to 90%) (Note 2) ● 100 ns I/OA, I/OB Low Level Output Voltage (VOL) Sink Current = – 1mA (VDATA = 0V) (Note 2) ● 0.3 V High Level Output Voltage (VOH) Source Current = 20µA (VDATA = VDVCC) (Note 2) ● 0.85 • VCCA,B V Rise/Fall Time Loaded with 50pF (10% to 90%) (Note 2) ● 500 ns Short-Circuit Current VDATA = 0V (Note 2) ● 510 mA DATA Low Level Output Voltage (VOL) Sink Current = – 500µA (VI/OA,B = 0V) ● 0.3 V High Level Output Voltage (VOH) Source Current = 20µA (VI/OA,B = VCCA,B) ● 0.8 • DVCC V Rise/Fall Time Loaded with 50pF (10% to 90%) ● 125 500 ns ENABLEA, ENABLEB, RSTIN, CLKIN, CSEL, VSELA, VSELB, CLKRUNA, CLKRUNB Low Input Threshold (VIL) ● 0.15 • DVCC V High Input Threshold (VIH) ● 0.85 • DVCC V Input Current (IIH/IIL) ● –1 1 µA ELECTRICAL CHARACTERISTICS The ● denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VBATT = 3.3V, DVCC = 1.8V, CA = CB = 1µF, unless otherwise specified. Note 3: The LTC4558E is guaranteed to meet performance specifications from 0°C to 85°C. Specifications over the –40°C to 85°C operating temperature range are assured by design, characterization and correlation with statistical process controls. Note 4: Based on long-term current density limitations. |
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