AON7406 datasheet(1/4 Pages) AOSMD

Part #	AON7406

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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1 / 4 page

Symbol

VDS

VGS

IDM

TJ, TSTG

Symbol

Typ

Max

30

40

60

75

RθJC

4

4.5

Junction and Storage Temperature Range

PD

°C

27

11

-55 to 150

TC=100°C

TA=70°C

Power Dissipation

B

W

Continuous Drain

Current

B,H

Maximum

Units

Parameter

TC=25°C

TC=100°C

30

Absolute Maximum Ratings TA=25°C unless otherwise noted

V

3.1

2

11

A

ID

Pulsed Drain Current

C

8.8

20

50

TA=70°C

V

±20

Gate-Source Voltage

Drain-Source Voltage

Steady-State

Continuous Drain

Current

G

TA=25°C

IDSM

TA=25°C

PDSM

TC=25°C

Maximum Junction-to-Ambient

A

Steady-State

Power Dissipation

A

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient

A

t ≤ 10s

RθJA

°C/W

Maximum Junction-to-Case

D

AON7406

N-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = 30V

ID = 11A

(VGS = 10V)

RDS(ON) < 15mΩ (VGS = 10V)

RDS(ON) < 23.5mΩ (VGS = 4.5V)

General Description

The AON7406 uses advanced trench technology and

design to provide excellent RDS(ON) with low gate

charge. This device is suitable for use in SMPS and

general purpose applications. Standard Product

AON7406 is Pb-free (meets ROHS & Sony 259

specifications).

G

D

S

G

S

D

DFN 3x3

Top View

Bottom View

Pin 1

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

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AON7406 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

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