AON7406 datasheet(2/4 Pages) AOSMD

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AON7406

Symbol

Min

Typ

Max

Units

BVDSS

TJ=55°C

IGSS

±100

VGS(th)

1.6

ID(ON)

12.5

TJ=125°C

17.5

23.5

gFS

VSD

0.73

Ciss

955

1200

Coss

145

Crss

112

0.5

0.85

Ω

Qg (10V)

Qg (4.5V)

912

Qgs

3.4

Qgd

4.7

tD(on)

5ns

6ns

tD(off)

4.5

trr

Qrr

9nC

150

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

VGS=10V, VDS=5V

VDS=30V, VGS=0V

VDS=0V, VGS= ±20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

IDSS

Body Diode Reverse Recovery Charge IF=11A, dI/dt=100A/µs

Body Diode Reverse Recovery Time

VGS=10V, ID=11A

Reverse Transfer Capacitance

IF=11A, dI/dt=100A/µs

Gate Threshold Voltage

VDS=VGS ID=250µA

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

DYNAMIC PARAMETERS

VGS=4.5V, ID=8.5A

IS=1A,VGS=0V

VDS=5V, ID=10A

Ω

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=15V, RL=1.5Ω,

RGEN=3Ω

Turn-Off Fall Time

Turn-On DelayTime

Gate Drain Charge

VGS=0V, VDS=15V, f=1MHz

SWITCHING PARAMETERS

Total Gate Charge

Gate Source Charge

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Total Gate Charge

VGS=10V, VDS=15V, ID=10A

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA

curve provides a single pulse rating.

F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

G.The maximum current rating is limited by bond-wires.

Rev1: Nov 2007

Alpha & Omega Semiconductor, Ltd.

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