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AOTF474L Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOTF474L Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 7 page  AOT474/AOTF474 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary VDS 75V ID_TO220 (at VGS=10V) 127A ID_TO220FL (at VGS=10V) 47A RDS(ON) (at VGS=10V) < 11.3m Ω 100% UIS Tested AOT(F)474 -RoHS Compliant AOT(F)474L -Halogen Free Symbol VDS VGS IDM IAR EAR TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJC Junction and Storage Temperature Range -55 to 175 °C Thermal Characteristics Units Maximum Junction-to-Ambient A °C/W RθJA 13.9 65 13.9 Parameter AOT474 AOTF474 V ±25 Gate-Source Voltage Drain-Source Voltage 75 V Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted AOT474 AOTF474 Repetitive avalanche energy L=0.1mH C mJ Avalanche Current C Continuous Drain Current 562 A 106 7 99 A TA=25°C IDSM A TA=70°C ID TC=25°C TC=100°C Pulsed Drain Current C Continuous Drain Current W Power Dissipation A PDSM W TA=70°C TA=25°C 1.9 1.9 TC=25°C TC=100°C The AOT(F)474/L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low RDS(ON) and excellent thermal capability this device is appropriate for high current switching and can endure adverse operating conditions. AOT(F)474/AOT(F)474L are electrically Identical Maximum Junction-to-Case °C/W °C/W Maximum Junction-to-Ambient A D 0.36 65 2.6 Power Dissipation B PD 127 47 89 33 200 1.2 1.2 7 417 57.5 208 29 G D S TO220FL Top View Bottom View G D S G D S TO220 Top View Bottom View G G S D D S D AOT474 AOTF474 Rev 0: February 2009 www.aosmd.com Page 1 of 7 |
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