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AOTF409 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOTF409 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 6 page  General Description Features (VGS = -10V) (VGS = -10V) (VGS = -4.5V) - RoHS Compliant 100% UIS Tested! - AOTF409L Halogen Free Symbol VDS VGS IDM IAR EAR TJ, TSTG Symbol Typ Max 10 12 48.5 58 RθJC 2.9 3.5 ID = -24A RDS(ON) < 40mΩ TC=25°C 2.16 21 TC=100°C -37 -60 Pulsed Drain Current C Continuous Drain Current G Junction and Storage Temperature Range -55 to 175 °C Thermal Characteristics Units Maximum Junction-to-Ambient A t ≤ 10s °C/W Parameter RθJA V V ±20 Gate-Source Voltage Drain-Source Voltage -60 AOTF409 P-Channel Enhancement Mode Field Effect Transistor Maximum Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted The AOTF409/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the TO220FL package, this device is well suited for high current load applications.AOTF409 and AOTF409L are electrically identical. RDS(ON) < 54mΩ VDS (V) =-60V Repetitive avalanche energy L=0.1mH C mJ Avalanche Current C -4.3 Continuous Drain Current 68 -5.4 A A TA=25°C IDSM A TA=70°C ID -24 -17 TC=25°C TC=100°C Power Dissipation B PD W Power Dissipation A PDSM W TA=70°C 43 1.38 TA=25°C Maximum Junction-to-Case Steady-State °C/W Steady-State °C/W Maximum Junction-to-Ambient A D G D S TO-220FL D G S Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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Similar Description - AOTF409 |
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